PART |
Description |
Maker |
GRM21BR71H104KA01B GRM21BR71H105KA12L 2508051107Y0 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc Freescale Semiconductor...
|
GRM21BR72A103KA01B ATC600F220JT250XT ATC600F300JT2 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc Freescale Semiconductor, In... Freescale Semiconductor...
|
AN1224 |
LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION
|
SGS Thomson Microelectronics
|
LET9060C |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
LET9130 |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
RF--35 CRCW120610KOJNEA CRCW120610ROJNEA ATC100B0R |
RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
LET9002 |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
LET21004 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
LET20015 9336 |
From old datasheet system RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|